Carborane implants-

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Carborane implants

Carborane implants

Carborane implants

Lateral straggle is Xxx spoofer as the motion of ions parallel to the wafer as a result of ion implantation. Silicon or other materials may also have an amorphous crystal structure. The amorphous-crystalline interface is deeper than in FIG. Semiconductor device having improved doping profiles and a method of improving Carborane implants doping profiles of a semiconductor device. B, pp. The Carborane implants PAI also may enable Carborane implants MS anneal implats tailoring of junction depth for other dopants besides boron, such as arsenic or phosphorus. It will be understood to those skilled in the art that the entire path traversed by the ion beam is evacuated during ion implantation. The concentration of dopant impurities so introduced determines the electrical conductivity of the resultant region. Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage.

Ass paraa. US 2008 305 598 A1

The carborane material was incorporated into the vapor delivery system depicted in FIG. It is recognized that this limit can be approximated by:. Carborane implants ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane cluster implajts. Such carborane carbon ion implants can be used in place of Boron for various applications including :source and drain extensions, polygate implants, halo implants and Carborqne source implants. Doping using these techniques requires striking a plasma in a large vacuum vessel that has been evacuated and then backfilled with a gas containing the dopant of choice such as carborane molecules, Carorane. The method of claim 18wherein step c comprises accelerating the Carborane implants cluster ions into a substrate under the influence of a pulsed bias applied to the substrate. GOV collections:. Assignment does not change access privileges to resource content. The P-well 43 forms a junction with Carborane implants N-type substrate 41 that provides junction isolation for the transistors in the well impants In FIG. The design of the source takes advantage of the remote electron emitter location made possible by the electron injection optics. Gallery pussy redhead shaved thumbnail, the implanter is operated at an extraction voltage approximately n times higher than the required implant energy, which enables higher ion beam current, particularly at the low implantation energies required by USJ formation.

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This application is a continuation-in-part of U. Provisional Patent Application No. Ion implanters are commonly used in the production of semiconductor wafers. An ion source is used to create a beam of charged ions, which is then directed toward the wafer.

As the ions strike the wafer, they impart a charge in the area of impact. The configuration of doped regions defines their functionality, and through the use of conductive interconnects, these wafers can be transformed into complex circuits.

Those skilled in the art will recognize that the plasma doping system and the beam-line ion implanter are each only one of many examples of differing plasma doping systems and beam-line ion implanters that can provide ions. This process also may be performed with other ion implantation systems or other substrate or semiconductor wafer processing equipment.

While a silicon substrate is discussed in many embodiments, this process also may be applied to substrates composed of SiC, GaN, GaP, GaAs, polysilicon, Ge, quartz, or other materials known to those skilled in the art. Turning to FIG.

A platen may be positioned in the process chamber to support a substrate In one instance, the substrate may be a semiconductor wafer having a disk shape, such as, in one embodiment, a millimeter mm diameter silicon wafer.

The substrate may be clamped to a flat surface of the platen by electrostatic or mechanical forces. In one embodiment, the platen may include conductive pins not shown for making connection to the substrate A gas source provides a dopant gas to the interior volume of the process chamber through the mass flow controller A gas baffle is positioned in the process chamber to deflect the flow of gas from the gas source A pressure gauge measures the pressure inside the process chamber A vacuum pump evacuates exhausts from the process chamber through an exhaust port in the process chamber An exhaust valve controls the exhaust conductance through the exhaust port The plasma doping system may further include a gas pressure controller that is electrically connected to the mass flow controller , the pressure gauge , and the exhaust valve The gas pressure controller may be configured to maintain a desired pressure in the process chamber by controlling either the exhaust conductance with the exhaust valve or a process gas flow rate with the mass flow controller in a feedback loop that is responsive to the pressure gauge The process chamber may have a chamber top 18 that includes a first section formed of a dielectric material that extends in a generally horizontal direction.

The chamber top also includes a second section formed of a dielectric material that extends a height from the first section in a generally vertical direction. The chamber top further includes a lid formed of an electrically and thermally conductive material that extends across the second section in a horizontal direction. The plasma doping system may further include a source configured to generate a plasma within the process chamber The source may include a RF source , such as a power supply, to supply RF power to either one or both of the planar antenna and the helical antenna to generate the plasma The RF source may be coupled to the antennas , by an impedance matching network that matches the output impedance of the RF source to the impedance of the RF antennas , in order to maximize the power transferred from the RF source to the RF antennas , The plasma doping system also may include a bias power supply electrically coupled to the platen The bias power supply is configured to provide a pulsed platen signal having pulse on and off time periods to bias the platen , and, hence, the substrate , and to accelerate ions from the plasma toward the substrate during the pulse on time periods and not during the pulse off periods.

The bias power supply may be a DC or an RF power supply. The plasma doping system may further include a shield ring disposed around the platen As is known in the art, the shield ring may be biased to improve the uniformity of implanted ion distribution near the edge of the substrate One or more Faraday sensors such as an annular Faraday sensor may be positioned in the shield ring to sense ion beam current.

The plasma doping system may further include a controller and a user interface system The controller can also include other electronic circuitry or components, such as application-specific integrated circuits, other hardwired or programmable electronic devices, discrete element circuits, etc.

The controller also may include communication devices, data storage devices, and software. For clarity of illustration, the controller is illustrated as providing only an output signal to the power supplies , , and receiving input signals from the Faraday sensor Those skilled in the art will recognize that the controller may provide output signals to other components of the plasma doping system and receive input signals from the same.

The user interface system may include devices such as touch screens, keyboards, user pointing devices, displays, printers, etc. In operation, the gas source supplies a primary dopant gas containing a desired dopant for implantation into the substrate The gas pressure controller regulates the rate at which the primary dopant gas is supplied to the process chamber The source is configured to generate the plasma within the process chamber The source may be controlled by the controller To generate the plasma , the RF source resonates RF currents in at least one of the RF antennas , to produce an oscillating magnetic field.

The oscillating magnetic field induces RF currents into the process chamber The RF currents in the process chamber excite and ionize the primary dopant gas to generate the plasma The bias power supply provides a pulsed platen signal to bias the platen and, hence, the substrate to accelerate ions from the plasma toward the substrate during the pulse on periods of the pulsed platen signal.

The amplitude of the pulsed platen signal may be selected to provide a desired energy. With all other parameters being equal, a greater energy will result in a greater implanted depth. The plasma doping system may incorporate hot or cold implantation of ions in some embodiments.

In one instance, this may be for doping a semiconductor wafer. In general, the beam-line ion implanter includes an ion source to generate ions that form an ion beam The ion source may include an ion chamber and a gas box containing a gas to be ionized.

The gas is supplied to the ion chamber where the gas is ionized. This gas may be or may include or contain, in some embodiments, hydrogen, helium, other rare gases, oxygen, nitrogen, arsenic, boron, phosphorus, carborane, aikanes, or another large molecular compound. The ions thus generated are extracted from the ion chamber to form the ion beam A power supply is connected to an extraction electrode of the ion source and provides an adjustable voltage.

The ion beam passes through a suppression electrode and ground electrode to mass analyzer Mass analyzer includes resolving magnet and masking electrode having resolving aperture Resolving magnet deflects ions in the ion beam such that ions of a desired ion species pass through the resolving aperture Undesired ion species do not pass through the resolving aperture , but are blocked by the masking electrode Ions of the desired ion species pass through the resolving aperture to the angle corrector magnet Angle corrector magnet deflects ions of the desired ion species and converts the ion beam from a diverging ion beam to ribbon ion beam , which has substantially parallel ion trajectories.

The beam-line ion implanter may further include acceleration or deceleration units in some embodiments. An end station supports one or more substrates, such as substrate , in the path of ribbon ion beam such that ions of the desired species are implanted into substrate The substrate may be, for example, a silicon wafer or a solar panel. The end station may include a platen to support the substrate The end station also may include a scanner not shown for moving the substrate perpendicular to the long dimension of the ribbon ion beam cross-section, thereby distributing ions over the entire surface of substrate Although the ribbon ion beam is illustrated, other embodiments may provide a spot beam.

The ion implanter may include additional components known to those skilled in the art. For example, the end station typically includes automated substrate handling equipment for introducing substrates into the beam-line ion implanter and for removing substrates after ion implantation.

The end station also may include a dose measuring system, an electron flood gun, or other known components. It will be understood to those skilled in the art that the entire path traversed by the ion beam is evacuated during ion implantation. The beam-line ion implanter may incorporate hot or cold implantation of ions in some embodiments.

As stated above, ion implantation is a standard technique for introducing conductivity-altering impurities into semiconductor substrates. A desired impurity material is ionized in an ion source, the ions are accelerated, and the ions are directed at the surface of the substrate.

The energetic ions penetrate into the bulk of the semiconductor material. Following an annealing process, the ions may become incorporated into the crystalline lattice of the semiconductor material to form a region of desired conductivity. Silicon or other materials may also have an amorphous crystal structure. In a silicon substrate, one silicon atom is usually tetrahedrally bonded to four neighboring silicon atoms and these silicon atoms will form a well-ordered lattice across the substrate.

In contrast, this order does not exist in amorphous silicon. Instead, the silicon atoms form a random network and the silicon atoms may not be tetrahedrally bonded to four other silicon atoms.

In fact, some silicon atoms may have dangling bonds. Amorphizing implants, such as a pre-amorphizing implant PAI , are used to amorphize the crystal lattice of a substrate.

Prior to the amorphizing implant, the substrate usually has a crystal lattice with a long-range order. Such a structure allows implanted ions to move through the crystal, or channel. By amorphizing the substrate, channeling of dopants, or implantation of ions substantially between the crystal lattice of the substrate, during later implantation may be prevented or reduced because the substrate will lack a long-range order. Thus, the dopant implant profile may be kept shallow.

Previously, USJ formation had been performed with a PAI using heavier species such as germanium and silicon to prevent channeling. This method may cause residual damage at the end of range and subsequent leakage in complementary metal oxide semiconductor CMOS transistors. Yet, if the PAI step was removed, channeling of ions will occur, thereby increasing the junction depths. Additionally, advances in USJ have required annealing technologies capable of millisecond MS thermal budgets near a target temperature.

Furthermore, there is a lack of lateral diffusion of a dopant in the substrate. This lack of lateral diffusion may cause overlap capacitance issues within a device. Accordingly, there is a need to improve the implantation methods used to form USJ and, more particularly, there is a need to create methods using helium to form ultra shallow junctions.

The problems of the prior art are addressed by the present disclosure, which describes a method of using helium to create ultra shallow junctions. A pre-implantation amorphization using helium has significant advantages.

For example, it has been shown that upon anneal dopants will penetrate the substrate only to the original amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth.

Since positive ion bombardment is known to reduce device yields by charging the wafer, particularly damaging sensitive gate isolation, such a reduction in electrical current through the use of cluster ion beams is very attractive for USJ device manufacturing, which must increasingly accommodate thinner gate oxides and exceedingly low gate threshold voltages. The analyzer magnet is also a focusing element which forms a real image of the ion extraction aperture i. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. The trench isolation 42 provides lateral dielectric isolation between the N- and P-wells i. Experience suggests that while it is important to keep surfaces which come into contact with the material warm enough to avoid material deposition by cooling from the vapor phase, it is also necessary to avoid high temperatures. An important object of the present invention is to provide for relatively high dose, low-energy implants of boron into a semiconductor substrate. Thus, implanting with clusters of n dopant atoms rather than with single atoms ameliorates basic transport problems in low energy ion implantation and enables a dramatically more productive process.

Carborane implants

Carborane implants

Carborane implants

Carborane implants

Carborane implants

Carborane implants. User assignment

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Carborane implants

Carborane implants

Carborane implants